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- Metalorganic
compounds (jargon: metalorganics, metallo-organics) are a class of
chemical compounds that contain metals and organic ligands.
- Precursors are one
of the compounds that participates in the chemical reaction that
produces another compound.
- Metal-organic (MO)
chemicals or precursors are used in the epitaxial growth of LED
semiconductor materials
- Metal-organic (MO)
chemicals or precursors provide the source of metallic elements such
as gallium (Ga), indium (In) and aluminum (Al).
- Development of
metal organic precursors made significant contribution to the field
of semiconductor growth.
- Metal-organic (MO)
chemicals specifically designed for the MOVPE or CBE process, have
improved gas-phase and surface decomposition, leading to very thin
high quality semiconductor films.
- The tremendous
expansion of metal-organic chemical vapor deposition process (MOCVD)
is accounted for its ability to deposit at low temperature a wide
variety of thin film materials keeping advantages of the
conventional CVD process. The design and the selection of suitably
tailored metal-organic precursors is a fundamental key to develop
successfully an MOCVD process.
- The incorporation
efficiency (also called reactor efficiency) of trimethylgallium (TMGa)
and trimethylaluminium (TMAl) precursors were calculated and then
compare the ratio of molar flow rate of TMGa and TMAl and the ratio
of growth rate of GaN and AlN epitaxial layer.
- A novel method for
deposition of metal oxide thin films, including Al2O3,ZrO2, MnOx,
and RuOx were demonstrated where the metal-organic precursors and
oxidizing agents are delivered in liquid and supercritical CO2.
- Precursor films
consisting of mixtures of titanium (n-butoxide)2(2-ethylhexanote)2
and barium 2-ethylhexanoate were spin coated from methyl isobutyl
ketone (MIBK) solutions and used to directly deposit patterned mixed
metal oxide dielectric pads using standard lithographic exposure
tools and methods.
- Deposition of
crystalline alumina films at lower temperatures has demonstrated
marginally higher promise with metal-organic precursor systems.
These fall into three main categories: aluminum alkoxides, alkyl
compounds, and acetylacetonates.
- LNO layers were
prepared by a wet chemical method from metal-organic precursors on
Si and Al2O3 substrates..
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